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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-3PFa package *High voltage;high speed APPLICATIONS *Converters *Inverters *Switching regulators *Motor control systems PINNING (See Fig.2) PIN 1 2 3 Base Collector Emitter l DESCRIPTION BUW13F BUW13AF Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage BUW13F BUW13AF BUW13F BUW13AF CONDITIONS Open emitter VALUE 850 1000 400 450 9 15 30 6 9 TC=25 50 150 -65~150 UNIT V VCEO VEBO IC ICM IB IBM PT Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature Open base Open collector V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to ambient MAX 35 UNIT K/W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUW13F IC=0.1A ; IB=0; L=25mH BUW13AF BUW13F BUW13AF BUW13F BUW13AF IC=10A; IB=2A CONDITIONS BUW13F BUW13AF SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsat Collector-emitter saturation voltage 1.5 IC=8A; IB=1.6A IC=10A; IB=2A 1.6 IC=8A; IB=1.6A VCE=Rated VCES; VBE=0 Tj=125 VEB=9V; IC=0 IC=20mA ; VCE=5V IC=1.5A ; VCE=5V 10 10 1.0 4.0 10 35 35 V VBEsat Base-emitter saturation voltage V ICES IEBO hFE-1 hFE-2 Collector cut-off current Emitter cut-off current DC current gain DC current gain mA mA Switching times resistive load ton ts tf Turn-on time Storage time Fall time For BUW13AF IC=8A ;IB1=-IB2=-1.6A 1.0 4.0 0.8 s s s For BUW13F IC=10A ;IB1=-IB2=-2A 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUW13F BUW13AF Fig.2 Outline dimensions(unindicated tolerance:0.30mm) 3 |
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